Part Details for NTMSD6N303R2 by Rochester Electronics LLC
Overview of NTMSD6N303R2 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NTMSD6N303R2
NTMSD6N303R2 CAD Models
NTMSD6N303R2 Part Data Attributes
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NTMSD6N303R2
Rochester Electronics LLC
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Datasheet
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NTMSD6N303R2
Rochester Electronics LLC
6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | CASE 751-07, SOIC-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | CASE 751-07 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 325 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTMSD6N303R2
This table gives cross-reference parts and alternative options found for NTMSD6N303R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMSD6N303R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI9410DY | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | NTMSD6N303R2 vs SI9410DY |
| SI9410DY-T1 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | NTMSD6N303R2 vs SI9410DY-T1 |
| IRF7353D1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | NTMSD6N303R2 vs IRF7353D1PBF |
| AP6618GM-HF | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power | NTMSD6N303R2 vs AP6618GM-HF |
| IRF7353D1 | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | NTMSD6N303R2 vs IRF7353D1 |
| IRF7353D1TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | NTMSD6N303R2 vs IRF7353D1TRPBF |