IRF641 vs BUZ30A feature comparison

IRF641 Rochester Electronics LLC

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BUZ30A Infineon Technologies AG

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
Avalanche Energy Rating (Eas) 580 mJ 450 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 200 V
Drain Current-Max (ID) 18 A 21 A
Drain-source On Resistance-Max 0.18 Ω 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A 84 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 10
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3
ECCN Code EAR99
Samacsys Description Infineon BUZ30A N-channel MOSFET Transistor, 21 A, 200 V, 3-Pin TO-220
Samacsys Manufacturer Infineon
Samacsys Modified On 2023-03-07 16:10:32
Additional Feature AVALANCHE RATED
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 125 W

Compare IRF641 with alternatives

Compare BUZ30A with alternatives