IRF641
vs
MTP12N20
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
,
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Drain Current-Max (ID) |
18 A
|
12 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
125 W
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
16
|
7
|
| DS Breakdown Voltage-Min |
|
200 V
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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