BUZ30A
vs
IRF642
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
HARRIS SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
21 A
|
16 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
15
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.29.00.95
|
| Avalanche Energy Rating (Eas) |
|
580 mJ
|
| Case Connection |
|
DRAIN
|
| Drain-source On Resistance-Max |
|
0.22 Ω
|
| JEDEC-95 Code |
|
TO-220AB
|
| JESD-30 Code |
|
R-PSFM-T3
|
| JESD-609 Code |
|
e0
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation Ambient-Max |
|
125 W
|
| Power Dissipation-Max (Abs) |
|
125 W
|
| Pulsed Drain Current-Max (IDM) |
|
64 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Turn-off Time-Max (toff) |
|
122 ns
|
| Turn-on Time-Max (ton) |
|
98 ns
|
|
|
|
Compare IRF642 with alternatives