IRF640S
vs
SIHF640S-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
VISHAY SILICONIX
VISHAY SILICONIX
Part Package Code
D2PAK
D2PAK
Package Description
TO-263, D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
580 mJ
580 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
18 A
18 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
72 A
72 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
8
2
Pbfree Code
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
130 W
Time@Peak Reflow Temperature-Max (s)
40
Compare IRF640S with alternatives
Compare SIHF640S-GE3 with alternatives