SIHF640S-GE3 vs IRF640STRLPBF feature comparison

SIHF640S-GE3 Vishay Siliconix

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IRF640STRLPBF International Rectifier

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer VISHAY SILICONIX INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 LEAD FREE, PLASTIC, D2PAK-3
Pin Count 4 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ 580 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.18 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 130 W 130 W
Pulsed Drain Current-Max (IDM) 72 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
HTS Code 8541.29.00.95
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation Ambient-Max 125 W
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier

Compare SIHF640S-GE3 with alternatives

Compare IRF640STRLPBF with alternatives