IRF621R
vs
SSP6N90A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERSIL CORP
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
5 A
6 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
160 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Base Number Matches
4
2
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Avalanche Energy Rating (Eas)
667 mJ
DS Breakdown Voltage-Min
900 V
Drain-source On Resistance-Max
2.3 Ω
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Pulsed Drain Current-Max (IDM)
24 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Compare SSP6N90A with alternatives