SSP6N90A
vs
IRF623R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
ROCHESTER ELECTRONICS LLC
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
667 mJ
85 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
900 V
150 V
Drain Current-Max (ID)
6 A
4 A
Drain-source On Resistance-Max
2.3 Ω
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
160 W
Pulsed Drain Current-Max (IDM)
24 A
16 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Pbfree Code
Rohs Code
Case Connection
DRAIN
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Terminal Finish
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
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