SSP6N90A
vs
BUZ100SE3045A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
ROCHESTER ELECTRONICS LLC
Part Package Code
TO-220AB
D2PAK
Package Description
FLANGE MOUNT, R-PSFM-T3
PLASTIC, TO-263, 3 PIN
Pin Count
3
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
667 mJ
380 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
900 V
55 V
Drain Current-Max (ID)
6 A
77 A
Drain-source On Resistance-Max
2.3 Ω
0.015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
160 W
Pulsed Drain Current-Max (IDM)
24 A
308 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Rohs Code
Additional Feature
AVALANCHE RATED
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Terminal Finish
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SSP6N90A with alternatives
Compare BUZ100SE3045A with alternatives