IRF5210-003
vs
IXTA52P10P
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
IXYS CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
35 A
52 A
Drain-source On Resistance-Max
0.06 Ω
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN OVER NICKEL
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Part Package Code
D2PAK
Package Description
PLASTIC, TO-263, 3 PIN
Pin Count
4
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1500 mJ
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
300 W
Pulsed Drain Current-Max (IDM)
130 A
Time@Peak Reflow Temperature-Max (s)
10
Compare IRF5210-003 with alternatives
Compare IXTA52P10P with alternatives