IXTA52P10P
vs
IRF5210SPBF
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
LITTELFUSE INC
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
1000 mJ
120 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
52 A
38 A
Drain-source On Resistance-Max
0.05 Ω
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
275 pF
JEDEC-95 Code
TO-263AA
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
300 W
170 W
Pulsed Drain Current-Max (IDM)
130 A
140 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Yes
Part Package Code
D2PAK
Package Description
LEAD FREE, D2PAK-3
Pin Count
3
Qualification Status
Not Qualified
Compare IXTA52P10P with alternatives
Compare IRF5210SPBF with alternatives