Part Details for IXTA52P10P by IXYS Corporation
Overview of IXTA52P10P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTA52P10P
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
747-IXTA52P10P
|
Mouser Electronics | MOSFETs -52.0 Amps -100V 0.050 Rds | 472 |
|
$3.5100 / $6.6200 | Buy Now |
|
Future Electronics | IXT Series 100 V 50 mOhm 300 W Surface Mount P-channel Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
|
$3.4500 / $3.7500 | Buy Now |
|
Future Electronics | IXT Series 100 V 50 mOhm 300 W Surface Mount P-channel Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 1 Container: Bulk | 0Bulk |
|
$3.9200 / $4.5800 | Buy Now |
DISTI #
IXTA52P10P
|
TTI | MOSFETs -52.0 Amps -100V 0.050 Rds Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 300 In Stock |
|
$3.4400 / $4.3500 | Buy Now |
DISTI #
IXTA52P10P
|
TME | Transistor: P-MOSFET, PolarP™, unipolar, -100V, -52A, 300W, TO263 Min Qty: 1 | 300 |
|
$4.4000 / $7.1100 | Buy Now |
|
New Advantage Corporation | MOSFET DIS.52A 100V P-CH TO263(D2PAK) TRENCHP SMT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 295 |
|
$8.3900 / $8.9900 | Buy Now |
Part Details for IXTA52P10P
IXTA52P10P CAD Models
IXTA52P10P Part Data Attributes
|
IXTA52P10P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTA52P10P
IXYS Corporation
Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 52 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA52P10P
This table gives cross-reference parts and alternative options found for IXTA52P10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA52P10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF5210-029 | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IXTA52P10P vs IRF5210-029 |
IRF5210-029PBF | 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IXTA52P10P vs IRF5210-029PBF |
IRF5210-005 | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IXTA52P10P vs IRF5210-005 |
IRF5210 | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXTA52P10P vs IRF5210 |
IRF5210-018 | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IXTA52P10P vs IRF5210-018 |
IRF5210-030PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IXTA52P10P vs IRF5210-030PBF |
IRF5210PBF | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IXTA52P10P vs IRF5210PBF |
IRF5210-003PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IXTA52P10P vs IRF5210-003PBF |
IRF5210-029 | Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IXTA52P10P vs IRF5210-029 |
IRF5210L | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | IXTA52P10P vs IRF5210L |