Datasheets
IXTA52P10P by:

Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

Part Details for IXTA52P10P by IXYS Corporation

Overview of IXTA52P10P by IXYS Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXTA52P10P

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA52P10P
Mouser Electronics MOSFETs -52.0 Amps -100V 0.050 Rds 472
  • 1 $6.6200
  • 10 $6.2200
  • 50 $5.2800
  • 100 $4.7200
  • 250 $4.6200
  • 500 $4.1700
  • 1,000 $3.5100
$3.5100 / $6.6200 Buy Now
Future Electronics IXT Series 100 V 50 mOhm 300 W Surface Mount P-channel Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.7500
  • 150 $3.6500
  • 250 $3.6000
  • 500 $3.5400
  • 1,000 $3.4500
$3.4500 / $3.7500 Buy Now
Future Electronics IXT Series 100 V 50 mOhm 300 W Surface Mount P-channel Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $4.5800
  • 15 $4.4000
  • 50 $4.2700
  • 150 $4.1600
  • 500 $3.9200
$3.9200 / $4.5800 Buy Now
DISTI # IXTA52P10P
TTI MOSFETs -52.0 Amps -100V 0.050 Rds Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 300
In Stock
  • 50 $4.3500
  • 100 $4.2300
  • 250 $4.1200
  • 500 $4.0000
  • 1,000 $3.5100
  • 2,000 $3.4400
$3.4400 / $4.3500 Buy Now
DISTI # IXTA52P10P
TME Transistor: P-MOSFET, PolarP™, unipolar, -100V, -52A, 300W, TO263 Min Qty: 1 300
  • 1 $7.1100
  • 50 $5.7400
  • 100 $5.3500
  • 250 $4.8900
  • 500 $4.5300
  • 1,000 $4.4000
$4.4000 / $7.1100 Buy Now
New Advantage Corporation MOSFET DIS.52A 100V P-CH TO263(D2PAK) TRENCHP SMT RoHS: Compliant Min Qty: 1 Package Multiple: 100 295
  • 100 $8.9900
  • 295 $8.3900
$8.3900 / $8.9900 Buy Now

Part Details for IXTA52P10P

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IXTA52P10P Part Data Attributes

IXTA52P10P IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTA52P10P IXYS Corporation Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 130 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA52P10P

This table gives cross-reference parts and alternative options found for IXTA52P10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA52P10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5210-029 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IXTA52P10P vs IRF5210-029
IRF5210-029PBF 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IXTA52P10P vs IRF5210-029PBF
IRF5210-005 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IXTA52P10P vs IRF5210-005
IRF5210 Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IXTA52P10P vs IRF5210
IRF5210-018 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IXTA52P10P vs IRF5210-018
IRF5210-030PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IXTA52P10P vs IRF5210-030PBF
IRF5210PBF Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IXTA52P10P vs IRF5210PBF
IRF5210-003PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IXTA52P10P vs IRF5210-003PBF
IRF5210-029 Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IXTA52P10P vs IRF5210-029
IRF5210L Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IXTA52P10P vs IRF5210L

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