IRF449
vs
FQB6N40C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
ON SEMICONDUCTOR
Package Description
FLANGE MOUNT, O-MBFM-P2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
400 V
Drain Current-Max (ID)
8.6 A
6 A
Drain-source On Resistance-Max
0.75 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
130 W
Pulsed Drain Current-Max (IDM)
34 A
24 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
GULL WING
Terminal Position
BOTTOM
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Additional Feature
FAST SWITCHING
Avalanche Energy Rating (Eas)
270 mJ
Moisture Sensitivity Level
1
Transistor Application
SWITCHING
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