Datasheets
IRF449 by:

Power Field-Effect Transistor, 8.6A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF449 by International Rectifier

Overview of IRF449 by International Rectifier

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Part Details for IRF449

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IRF449 Part Data Attributes

IRF449 International Rectifier
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IRF449 International Rectifier Power Field-Effect Transistor, 8.6A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.6 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF449

This table gives cross-reference parts and alternative options found for IRF449. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF449, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFBE32 International Rectifier Check for Price Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF449 vs IRFBE32
SFP9Z34 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF449 vs SFP9Z34
BUZ100SE3045A Rochester Electronics LLC Check for Price 77A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN IRF449 vs BUZ100SE3045A
SSF8N90A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.5A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN IRF449 vs SSF8N90A
FQPF7N20 Rochester Electronics LLC Check for Price 4.8A, 200V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN IRF449 vs FQPF7N20
FQB6N40C Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF449 vs FQB6N40C
IRLI3803 International Rectifier Check for Price Power Field-Effect Transistor, 76A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 IRF449 vs IRLI3803
SPP16N50C3 Rochester Electronics LLC Check for Price 16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IRF449 vs SPP16N50C3
IRF623R Rochester Electronics LLC Check for Price 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF449 vs IRF623R
FQPF6N40CT Rochester Electronics LLC Check for Price 6A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN IRF449 vs FQPF6N40CT

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