IRF3707ZCSTRLP
vs
2SK3134(L)
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
RENESAS ELECTRONICS CORP
|
Package Description |
LEAD FREE, PLASTIC, D2PAK-3
|
LDPAK-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Avalanche Energy Rating (Eas) |
40 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
42 A
|
75 A
|
Drain-source On Resistance-Max |
0.0095 Ω
|
0.0085 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
230 A
|
300 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier
|
TIN LEAD
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
|
|
|
Compare IRF3707ZCSTRLP with alternatives
Compare 2SK3134(L) with alternatives