2SK3134(L)
vs
2SK3134L
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Not Recommended
Ihs Manufacturer
HITACHI LTD
RENESAS ELECTRONICS CORP
Package Description
IN-LINE, R-PSIP-T3
LDPAK-3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
75 A
75 A
Drain-source On Resistance-Max
0.0085 Ω
0.0085 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
100 W
Pulsed Drain Current-Max (IDM)
300 A
300 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Rohs Code
Date Of Intro
1999-02-01
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare 2SK3134(L) with alternatives
Compare 2SK3134L with alternatives