2SK3134(L) vs IPP07N03LBG feature comparison

2SK3134(L) Renesas Electronics Corporation

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IPP07N03LBG Infineon Technologies AG

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP INFINEON TECHNOLOGIES AG
Package Description LDPAK-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code unknown compliant
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 75 A 50 A
Drain-source On Resistance-Max 0.0085 Ω 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 300 A 200 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code Yes
Part Package Code TO-220AB
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 164 mJ
JEDEC-95 Code TO-220AB
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 94 W

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Compare IPP07N03LBG with alternatives