IRF331 vs JAN2N6760 feature comparison

IRF331 Freescale Semiconductor

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JAN2N6760 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA SEMICONDUCTOR PRODUCTS MICROSEMI CORP
Package Description , TO-3, 2 PIN
Reach Compliance Code unknown not_compliant
Configuration Single SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 5.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount NO NO
Base Number Matches 16 3
Pbfree Code No
Part Package Code TO-3
Pin Count 2
ECCN Code EAR99
Case Connection DRAIN
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.22 Ω
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Qualified
Reference Standard MIL-19500
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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