IRF331
vs
2N6760TXV
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SILICONIX INC
|
ROCHESTER ELECTRONICS LLC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
350 V
|
400 V
|
| Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
| Drain-source On Resistance-Max |
1 Ω
|
1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-204
|
TO-204AA
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
RADIATION HARDENED
|
| Case Connection |
|
DRAIN
|
| Pulsed Drain Current-Max (IDM) |
|
8 A
|
| Reference Standard |
|
MILITARY STANDARD (USA)
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRF331 with alternatives
Compare 2N6760TXV with alternatives