Part Details for IRF331 by Vishay Siliconix
Overview of IRF331 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF331
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-3 | 1 |
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$6.0000 | Buy Now |
Part Details for IRF331
IRF331 CAD Models
IRF331 Part Data Attributes:
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IRF331
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF331
Vishay Siliconix
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SILICONIX INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF331
This table gives cross-reference parts and alternative options found for IRF331. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF331, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6760TXV | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF331 vs 2N6760TXV |
| IRF331 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-3 | Intersil Corporation | IRF331 vs IRF331 |
| JANTX2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF331 vs JANTX2N6760 |
| JANTXV2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corporation | IRF331 vs JANTXV2N6760 |
| JANTX2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF331 vs JANTX2N6760 |
| JANTXV2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | IRF331 vs JANTXV2N6760 |
| JANTXV2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | IRF331 vs JANTXV2N6760 |
| UFN331 | Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF331 vs UFN331 |
| IRF331 | Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF331 vs IRF331 |
| 2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | IRF331 vs 2N6760 |