IRF230EBPBF
vs
IRF232
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SAMSUNG SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
54 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
9 A
8 A
Drain-source On Resistance-Max
0.49 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
36 A
Qualification Status
Not Qualified
Reference Standard
CECC
Surface Mount
NO
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
2
11
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
75 W
Terminal Finish
Tin/Lead (Sn/Pb)
Compare IRF230EBPBF with alternatives
Compare IRF232 with alternatives