Part Details for IRF232 by Samsung Semiconductor
Overview of IRF232 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF232
IRF232 CAD Models
IRF232 Part Data Attributes
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IRF232
Samsung Semiconductor
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Datasheet
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IRF232
Samsung Semiconductor
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF232
This table gives cross-reference parts and alternative options found for IRF232. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF232, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6758 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF232 vs 2N6758 |
| UFN231 | Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF232 vs UFN231 |
| JANTXV2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | Microsemi Corporation | IRF232 vs JANTXV2N6758 |
| 2N6758PBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF232 vs 2N6758PBF |
| IRF230 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF232 vs IRF230 |
| IRF231 | Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF232 vs IRF231 |
| 2N6758R1 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF232 vs 2N6758R1 |
| IRF230R1 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF232 vs IRF230R1 |
| UFN232 | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF232 vs UFN232 |
| JANTX2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF232 vs JANTX2N6758 |