IRF230EBPBF vs IRF143R feature comparison

IRF230EBPBF International Rectifier

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IRF143R Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 54 mJ 100 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 80 V
Drain Current-Max (ID) 9 A 25 A
Drain-source On Resistance-Max 0.49 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA TO-204AE
JESD-30 Code O-MBFM-P2 O-MBFM-P2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 75 W 150 W
Pulsed Drain Current-Max (IDM) 36 A 100 A
Qualification Status Not Qualified Not Qualified
Reference Standard CECC
Surface Mount NO NO
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 100 ns 135 ns
Turn-on Time-Max (ton) 115 ns 133 ns
Base Number Matches 2 4
JESD-609 Code e0
Power Dissipation-Max (Abs) 150 W
Terminal Finish TIN LEAD

Compare IRF230EBPBF with alternatives

Compare IRF143R with alternatives