SIHG33N65EF-GE3
vs
STW36NM60N
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
STMICROELECTRONICS
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
19 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
508 mJ
345 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
600 V
Drain Current-Max (ID)
31.6 A
29 A
Drain-source On Resistance-Max
0.109 Ω
0.105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AC
TO-247
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
93 A
116 A
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
TO-247
Package Description
ROHS COMPLIANT PACKAGE-3
Pin Count
3
Compare SIHG33N65EF-GE3 with alternatives
Compare STW36NM60N with alternatives