IDH12G65C6XKSA1
vs
VS-8TQ080-M3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
R-PSFM-T2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
17 Weeks
|
16 Weeks, 3 Days
|
| Samacsys Manufacturer |
Infineon
|
Vishay
|
| Additional Feature |
PD-CASE
|
FREE WHEELING DIODE
|
| Application |
EFFICIENCY
|
GENERAL PURPOSE
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.35 V
|
0.88 V
|
| JEDEC-95 Code |
TO-220AC
|
TO-220AC
|
| JESD-30 Code |
R-PSFM-T2
|
R-PSFM-T2
|
| JESD-609 Code |
e3
|
e3
|
| Non-rep Pk Forward Current-Max |
51 A
|
230 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Power Dissipation-Max |
81 W
|
|
| Rep Pk Reverse Voltage-Max |
650 V
|
80 V
|
| Reverse Current-Max |
40 µA
|
550 µA
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
Tin (Sn)
|
Matte Tin (Sn)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.10.00.80
|
| Moisture Sensitivity Level |
|
1
|
| Output Current-Max |
|
8 A
|
|
|
|
Compare IDH12G65C6XKSA1 with alternatives
Compare VS-8TQ080-M3 with alternatives