HVC308AKRF
vs
HVC383B-E
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
HITACHI LTD
RENESAS TECHNOLOGY CORP
Package Description
R-PDSO-F2
R-PDSO-F2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
35 V
Configuration
SINGLE
SINGLE
Diode Capacitance Ratio-Min
7.12
2
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Pbfree Code
Rohs Code
Pin Count
2
Diode Cap Tolerance
5%
Diode Capacitance-Nom
20 pF
JESD-609 Code
e6
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
TIN BISMUTH
Time@Peak Reflow Temperature-Max (s)
20
Compare HVC308AKRF with alternatives
Compare HVC383B-E with alternatives