HUF76113DK8T
vs
F5H3N
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
No
Rohs Code
Yes
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code
SOIC
Package Description
PLASTIC, SO-8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
6 A
5 A
Drain-source On Resistance-Max
0.041 Ω
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
2
Number of Elements
2
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
1.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Category CO2 Kg
8.8
Peak Reflow Temperature (Cel)
240
Compare HUF76113DK8T with alternatives
Compare F5H3N with alternatives