HUF76113DK8T vs F5H3N feature comparison

HUF76113DK8T Fairchild Semiconductor Corporation

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F5H3N Shindengen Electronic Manufacturing Co Ltd

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Part Package Code SOIC
Package Description PLASTIC, SO-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 6 A 5 A
Drain-source On Resistance-Max 0.041 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 2
Number of Elements 2 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 1.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Category CO2 Kg 8.8
Peak Reflow Temperature (Cel) 240

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