IRF5N3710
vs
IXTY44N10T
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
IXYS CORP
|
Package Description |
CHIP CARRIER, R-CBCC-N3
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
250 mJ
|
250 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
45 A
|
44 A
|
Drain-source On Resistance-Max |
0.028 Ω
|
0.03 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
125 W
|
130 W
|
Pulsed Drain Current-Max (IDM) |
180 A
|
110 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
Terminal Form |
NO LEAD
|
GULL WING
|
Terminal Position |
BOTTOM
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
10
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-252AA
|
Pin Count |
|
4
|
Additional Feature |
|
AVALANCHE RATED
|
Feedback Cap-Max (Crss) |
|
47 pF
|
JEDEC-95 Code |
|
TO-252AA
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare IRF5N3710 with alternatives
Compare IXTY44N10T with alternatives