HN62331AP-12
vs
WME128K8-140CIA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
HITACHI LTD
MICROSEMI CORP
Part Package Code
DIP
DIP
Package Description
DIP, DIP32,.6
0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
Pin Count
32
32
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.71
8542.32.00.51
Access Time-Max
120 ns
140 ns
JESD-30 Code
R-PDIP-T32
R-CDIP-T32
JESD-609 Code
e0
Length
41.9 mm
Memory Density
1048576 bit
1048576 bit
Memory IC Type
MASK ROM
EEPROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
85 °C
Operating Temperature-Min
-40 °C
Organization
128KX8
128KX8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Equivalence Code
DIP32,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.08 mm
Standby Current-Max
0.00003 A
Supply Current-Max
0.05 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
INDUSTRIAL
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.5 mm
Terminal Position
DUAL
DUAL
Width
15.24 mm
Base Number Matches
2
4
Pbfree Code
Additional Feature
HARDWARE AND SOFTWARE DATA PROTECTION
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Programming Voltage
5 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Write Cycle Time-Max (tWC)
10 ms
Compare HN62331AP-12 with alternatives
Compare WME128K8-140CIA with alternatives