HN27C101AP-12
vs
WE128K8150CI
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
HITACHI LTD
|
MICROSEMI CORP
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP, DIP32,.6
|
HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
|
| Pin Count |
32
|
32
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.51
|
| Access Time-Max |
120 ns
|
150 ns
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
R-PDIP-T32
|
R-CDIP-T32
|
| JESD-609 Code |
e0
|
e4
|
| Length |
41.9 mm
|
42.8 mm
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
OTP ROM
|
EEPROM MODULE
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
131072 words
|
131072 words
|
| Number of Words Code |
128000
|
128000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
128KX8
|
128KX8
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP32,.6
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.13 mm
|
| Standby Current-Max |
0.001 A
|
|
| Supply Current-Max |
0.05 mA
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
GOLD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
15.25 mm
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
No
|
| Programming Voltage |
|
5 V
|
| Write Cycle Time-Max (tWC) |
|
10 ms
|
|
|
|
Compare HN27C101AP-12 with alternatives
Compare WE128K8150CI with alternatives