HM4-65767BN-6:RD
vs
MAR5114CB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MATRA MHS
|
GEC PLESSEY SEMICONDUCTORS
|
| Package Description |
,
|
DIP, DIP18,.3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
55 ns
|
135 ns
|
| JESD-30 Code |
R-CQCC-N20
|
R-CDIP-T18
|
| Memory Density |
16384 bit
|
4096 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
1
|
4
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
20
|
18
|
| Number of Words |
16384 words
|
1024 words
|
| Number of Words Code |
16000
|
1000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Organization |
16KX1
|
1KX4
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
NO
|
NO
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
| Terminal Position |
QUAD
|
DUAL
|
| Base Number Matches |
1
|
4
|
| Rohs Code |
|
No
|
| I/O Type |
|
COMMON
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Code |
|
DIP
|
| Package Equivalence Code |
|
DIP18,.3
|
| Screening Level |
|
38535Q/M;38534H;883B
|
| Standby Current-Max |
|
0.002 A
|
| Standby Voltage-Min |
|
2 V
|
| Supply Current-Max |
|
0.035 mA
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
| Temperature Grade |
|
MILITARY
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Pitch |
|
2.54 mm
|
| Total Dose |
|
100k Rad(Si) V
|
|
|
|
Compare HM4-65767BN-6:RD with alternatives
Compare MAR5114CB with alternatives