MAR5114CB vs IDT6167LA70LB feature comparison

MAR5114CB Plessey Semiconductors Ltd

Buy Now Datasheet

IDT6167LA70LB Integrated Device Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GEC PLESSEY SEMICONDUCTORS INTEGRATED DEVICE TECHNOLOGY INC
Package Description DIP, DIP18,.3 0.300 INCH, LCC-20
Reach Compliance Code unknown not_compliant
Access Time-Max 135 ns 70 ns
I/O Type COMMON SEPARATE
JESD-30 Code R-CDIP-T18 R-CQCC-N20
JESD-609 Code e0 e0
Memory Density 4096 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 4 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 18 20
Number of Words 1024 words 16384 words
Number of Words Code 1000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 1KX4 16KX1
Output Characteristics 3-STATE 3-STATE
Output Enable NO NO
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DIP QCCN
Package Equivalence Code DIP18,.3 LCC20,.3X.43
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Standby Current-Max 0.002 A 0.0002 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.035 mA 0.06 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO YES
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE NO LEAD
Terminal Pitch 2.54 mm 1.27 mm
Terminal Position DUAL QUAD
Total Dose 100k Rad(Si) V
Base Number Matches 4 1
Part Package Code QLCC
Pin Count 20
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
Length 10.8585 mm
Seated Height-Max 1.905 mm
Width 7.366 mm

Compare MAR5114CB with alternatives

Compare IDT6167LA70LB with alternatives