HM1-6514S2
vs
CMM5114AD1RZ
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
HARRIS SEMICONDUCTOR
Package Description
DIP, DIP18,.3
DIP, DIP18,.3
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
120 ns
250 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDIP-T18
R-XDIP-T18
JESD-609 Code
e0
e0
Memory Density
4096 bit
4096 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
4
4
Number of Terminals
18
18
Number of Words
1024 words
1024 words
Number of Words Code
1000
1000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
1KX4
1KX4
Output Characteristics
3-STATE
3-STATE
Package Body Material
CERAMIC
CERAMIC
Package Code
DIP
DIP
Package Equivalence Code
DIP18,.3
DIP18,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Current-Max
0.000025 A
0.0005 A
Standby Voltage-Min
2 V
2.5 V
Supply Current-Max
0.031 mA
0.006 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Screening Level
38535V;38534K;883S
Total Dose
100k Rad(Si) V
Compare HM1-6514S2 with alternatives
Compare CMM5114AD1RZ with alternatives