Findchips: Compare HM1-6514S2 vs P2148H

HM1-6514S2 vs P2148H feature comparison

Buy Now

Buy Now Datasheet

Rohs Code	No	No
Part Life Cycle Code	Obsolete	Active
Ihs Manufacturer	HARRIS SEMICONDUCTOR	ROCHESTER ELECTRONICS LLC
Package Description	DIP, DIP18,.3
Reach Compliance Code	unknown	unknown
ECCN Code	3A001.A.2.C	3A001.A.2.C
HTS Code	8542.32.00.41	8542.32.00.41
Access Time-Max	120 ns	70 ns
I/O Type	COMMON	COMMON
JESD-30 Code	R-XDIP-T18	R-XDIP-T18
JESD-609 Code	e0
Memory Density	4096 bit	4096 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
Memory Width	4	4
Number of Terminals	18	18
Number of Words	1024 words	1024 words
Number of Words Code	1000	1000
Operating Mode	ASYNCHRONOUS	ASYNCHRONOUS
Operating Temperature-Max	125 °C	125 °C
Operating Temperature-Min	-55 °C	-55 °C
Organization	1KX4	1KX4
Output Characteristics	3-STATE	3-STATE
Package Body Material	CERAMIC	UNSPECIFIED
Package Code	DIP	DIP
Package Equivalence Code	DIP18,.3	DIP18,.3
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Qualification Status	Not Qualified
Standby Current-Max	0.000025 A	0.03 A
Standby Voltage-Min	2 V	4.5 V
Supply Current-Max	0.031 mA	0.18 mA
Supply Voltage-Nom (Vsup)	5 V	5 V
Surface Mount	NO	NO
Technology	CMOS	MOS
Temperature Grade	MILITARY
Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	THROUGH-HOLE	THROUGH-HOLE
Terminal Pitch	2.54 mm	2.54 mm
Terminal Position	DUAL	DUAL
Base Number Matches	2	2
Number of Functions		1
Number of Ports		1
Output Enable		NO
Peak Reflow Temperature (Cel)		NOT SPECIFIED
Supply Voltage-Max (Vsup)		5.5 V
Supply Voltage-Min (Vsup)		4.5 V
Time@Peak Reflow Temperature-Max (s)		NOT SPECIFIED
	Memory » SRAMs	Memory » SRAMs