HGTG30N60C3D vs HGT1S7N60A4DS9A feature comparison

HGTG30N60C3D onsemi

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HGT1S7N60A4DS9A onsemi

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Pbfree Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI ON SEMICONDUCTOR
Part Package Code TO-247-3
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 2 Days 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Collector Current-Max (IC) 63 A 34 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 550 ns 205 ns
Turn-on Time-Nom (ton) 85 ns 17 ns
Base Number Matches 5 4
Package Description SMALL OUTLINE, R-PSSO-G2
Case Connection COLLECTOR
Fall Time-Max (tf) 85 ns
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 125 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Turn-off Time-Max (toff) 235 ns
VCEsat-Max 2.7 V

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