HGT1S12N60B3
vs
SGW6N60UFD
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
PLASTIC PACKAGE-3
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
|
HIGH SPEED SWITCHING
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
27 A
|
6 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
175 ns
|
280 ns
|
| Gate-Emitter Thr Voltage-Max |
6 V
|
7.5 V
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JEDEC-95 Code |
TO-262AA
|
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
104 W
|
30 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
280 ns
|
120 ns
|
| Turn-on Time-Nom (ton) |
22 ns
|
37 ns
|
| Base Number Matches |
3
|
2
|
| Part Package Code |
|
D2PAK
|
| Pin Count |
|
3
|
|
|
|
Compare HGT1S12N60B3 with alternatives
Compare SGW6N60UFD with alternatives