HGT1S12N60B3 vs SGW13N60UF feature comparison

HGT1S12N60B3 Rochester Electronics LLC

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SGW13N60UF Fairchild Semiconductor Corporation

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC FAIRCHILD SEMICONDUCTOR CORP
Package Description PLASTIC PACKAGE-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code unknown unknown
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 27 A 13 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-262AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 280 ns 253 ns
Turn-on Time-Nom (ton) 22 ns 62 ns
Base Number Matches 3 2
Part Package Code D2PAK
ECCN Code EAR99
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 60 W

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