SGW6N60UFD
vs
HGTG18N120BN_NL
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Part Package Code |
D2PAK
|
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH SPEED SWITCHING
|
LOW CONDUCTION LOSS, AVALANCHE RATED
|
| Collector Current-Max (IC) |
6 A
|
54 A
|
| Collector-Emitter Voltage-Max |
600 V
|
1200 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| Fall Time-Max (tf) |
280 ns
|
200 ns
|
| Gate-Emitter Thr Voltage-Max |
7.5 V
|
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
30 W
|
390 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
120 ns
|
345 ns
|
| Turn-on Time-Nom (ton) |
37 ns
|
38 ns
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| JEDEC-95 Code |
|
TO-247
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Rise Time-Max (tr) |
|
22 ns
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SGW6N60UFD with alternatives
Compare HGTG18N120BN_NL with alternatives