HGT1S12N60A4DS vs HGTP11N120CN feature comparison

HGT1S12N60A4DS Fairchild Semiconductor Corporation

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HGTP11N120CN Intersil Corporation

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERSIL CORP
Part Package Code D2PAK TO-220AB
Pin Count 2 3
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 54 A 43 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 95 ns 230 ns
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W 298 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 180 ns 550 ns
Turn-on Time-Nom (ton) 33 ns 33 ns
Base Number Matches 4 2
Package Description FLANGE MOUNT, R-PSFM-T3
Rise Time-Max (tr) 16 ns

Compare HGT1S12N60A4DS with alternatives

Compare HGTP11N120CN with alternatives