HGTP11N120CN
vs
HGTG12N60C3D
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
HARRIS SEMICONDUCTOR
INTERSIL CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
43 A
24 A
Collector-Emitter Voltage-Max
1200 V
600 V
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
TO-247
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
MOTOR CONTROL
MOTOR CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
210 ns
540 ns
Turn-on Time-Nom (ton)
21 ns
74 ns
Base Number Matches
4
4
Rohs Code
Fall Time-Max (tf)
275000000000 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
104 W
Terminal Finish
Tin/Lead (Sn/Pb)
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