GBU6B
vs
CBR6M-L010
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
MOSPEC SEMICONDUCTOR CORP
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
100 V
100 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.1 V
Non-rep Pk Forward Current-Max
175 A
200 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
6 A
6 A
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
NO
NO
Base Number Matches
30
1
Pbfree Code
Rohs Code
Package Description
CASE DM, 4 PIN
Pin Count
4
Manufacturer Package Code
CASE DM
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PSFM-W4
JESD-609 Code
e0
Number of Terminals
4
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Qualification Status
Not Qualified
Reverse Current-Max
10 µA
Reverse Test Voltage
100 V
Terminal Finish
TIN LEAD
Terminal Form
WIRE
Terminal Position
SINGLE
Compare GBU6B with alternatives
Compare CBR6M-L010 with alternatives