GBPC3508W vs CBR35-080PW feature comparison

GBPC3508W Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

CBR35-080PW Central Semiconductor Corp

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.2 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO NO
Base Number Matches 30 1
Pbfree Code No
Package Description PLASTIC, CASE FPW, 4 PIN
Pin Count 4
Manufacturer Package Code CASE FPW
HTS Code 8541.10.00.80
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code S-PUFM-W4
JESD-609 Code e0
Number of Terminals 4
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position UPPER

Compare GBPC3508W with alternatives

Compare CBR35-080PW with alternatives