FR102SGA1G
vs
JAN1N5804URS
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
DEFENSE LOGISTICS AGENCY
|
Package Description |
O-PALF-W2
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.80
|
|
Additional Feature |
HIGH RELIABILITY, LOW POWER LOSS
|
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-PALF-W2
|
O-LELF-R2
|
JESD-609 Code |
e3
|
|
Non-rep Pk Forward Current-Max |
30 A
|
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Reverse Recovery Time-Max |
0.15 µs
|
0.025 µs
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
WIRE
|
WRAP AROUND
|
Terminal Position |
AXIAL
|
END
|
Base Number Matches |
1
|
3
|
Breakdown Voltage-Min |
|
110 V
|
Qualification Status |
|
Qualified
|
Reference Standard |
|
MIL-19500
|
Reverse Test Voltage |
|
100 V
|
|
|
|
Compare FR102SGA1G with alternatives
Compare JAN1N5804URS with alternatives