FF200R12KT3EHOSA1
vs
MII200-12A4
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
LITTELFUSE INC
|
Package Description |
MODULE-7
|
FLANGE MOUNT, R-XUFM-X7
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
16 Weeks
|
|
Samacsys Manufacturer |
Infineon
|
LITTELFUSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Collector Current-Max (IC) |
580 A
|
270 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
JESD-30 Code |
R-XUFM-X7
|
R-XUFM-X7
|
Number of Elements |
2
|
2
|
Number of Terminals |
7
|
7
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Reference Standard |
UL RECOGNIZED
|
UL RECOGNIZED
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
POWER CONTROL
|
MOTOR CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
680 ns
|
700 ns
|
Turn-on Time-Nom (ton) |
215 ns
|
150 ns
|
Base Number Matches |
1
|
1
|
Gate-Emitter Voltage-Max |
|
20 V
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
1250 W
|
Qualification Status |
|
Not Qualified
|
VCEsat-Max |
|
3 V
|
|
|
|
Compare FF200R12KT3EHOSA1 with alternatives
Compare MII200-12A4 with alternatives