FA1A4M
vs
RN1402
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NEC ELECTRONICS CORP
|
TOSHIBA CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO 1.11
|
BUILT IN BIAS RESISTANCE RATIO IS 1
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
80
|
50
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
6000 ns
|
|
| Turn-on Time-Max (ton) |
200 ns
|
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
SOT-23
|
| HTS Code |
|
8541.21.00.75
|
| Samacsys Manufacturer |
|
Toshiba
|
| Collector-Base Capacitance-Max |
|
6 pF
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
0.2 W
|
| Power Dissipation-Max (Abs) |
|
0.2 W
|
| Transition Frequency-Nom (fT) |
|
250 MHz
|
| VCEsat-Max |
|
0.3 V
|
|
|
|
Compare FA1A4M with alternatives
Compare RN1402 with alternatives