FA1A4M
vs
2SB647-D
feature comparison
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
RENESAS TECHNOLOGY CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-W3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO 1.11
|
|
| Collector Current-Max (IC) |
0.1 A
|
|
| Collector-Emitter Voltage-Max |
50 V
|
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
|
| DC Current Gain-Min (hFE) |
80
|
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-W3
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Max (toff) |
6000 ns
|
|
| Turn-on Time-Max (ton) |
200 ns
|
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare FA1A4M with alternatives
Compare 2SB647-D with alternatives