EGP30F/4G
vs
EGP30F
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
ONSEMI
|
| Package Description |
O-PALF-W2
|
DO-201AD, 2 PIN
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
|
|
| Application |
EFFICIENCY
|
EFFICIENCY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
300 V
|
300 V
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.05 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Manufacturer Package Code |
|
017AF
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Forward Voltage-Max (VF) |
|
1.3 V
|
| JEDEC-95 Code |
|
DO-201AD
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max |
|
6.25 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare EGP30F/4G with alternatives
Compare EGP30F with alternatives