DTC114YUAFRAT106 vs DTC114YXV3T1 feature comparison

DTC114YUAFRAT106 ROHM Semiconductor

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DTC114YXV3T1 onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer ROHM CO LTD ON SEMICONDUCTOR
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 80
JESD-30 Code R-PDSO-G3 R-PDSO-F3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 1
Part Package Code SC-89
Package Description SMALL OUTLINE, R-PDSO-F3
Pin Count 3
Manufacturer Package Code CASE 463C-03
JESD-609 Code e3
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Terminal Finish TIN

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