DTC114YUAFRAT106 vs DTC114TU3T106 feature comparison

DTC114YUAFRAT106 ROHM Semiconductor

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DTC114TU3T106 ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer ROHM Semiconductor ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 100
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Date Of Intro 2018-04-23
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.2 W
Terminal Finish Tin (Sn)
VCEsat-Max 0.3 V

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Compare DTC114TU3T106 with alternatives