DTC114YUAFRAT106 vs DTC114YUAT107 feature comparison

DTC114YUAFRAT106 ROHM Semiconductor

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DTC114YUAT107 ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A 0.07 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 68
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pbfree Code Yes
Package Description SMALL OUTLINE, R-PDSO-G3
JESD-609 Code e1
Operating Temperature-Max 150 °C
Qualification Status Not Qualified
Terminal Finish TIN SILVER COPPER
VCEsat-Max 0.3 V

Compare DTC114YUAFRAT106 with alternatives

Compare DTC114YUAT107 with alternatives